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Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells

Identifieur interne : 002361 ( Main/Repository ); précédent : 002360; suivant : 002362

Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells

Auteurs : RBID : Pascal:11-0406207

Descripteurs français

Pascal (Inist)
- Effet température, Dépendance température, Rendement quantique, Cellule solaire, Rendement élevé, Taux conversion, Matériau absorbant, Longueur diffusion, Durabilité, Etat actuel, Cellule solaire gallium phosphure, Recombinaison porteur charge, Niveau défaut, Energie activation, Modélisation, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Cu(In,Ga)Se2.

English descriptors

KwdEn :
- Absorbent material, Activation energy, Charge carrier recombination, Conversion rate, Copper selenides, Defect level, Diffusion length, Durability, Gallium phosphide solar cells, Gallium selenides, High efficiency, Indium selenides, Modeling, Quantum yield, Quaternary compound, Solar cell, State of the art, Temperature dependence, Temperature effect.

Abstract

Despite the high solar cell efficiencies achieved with Cu(In,Ga)Se₂ (CIGS) absorbers, key parameters such as the carrier diffusion length and recombination lifetime are still under investigation. Here, we extract lifetime and diffusion length from temperature-dependent internal quantum efficiency (IQET) spectra of state of the art high efficiency CIGS solar cells. Two-parameter fits to the measured IQE curves using a model for double-graded gap solar cells show very good agreement in the studied temperature range T=146-293 K, allowing the extraction of the electron recombination lifetime in the absorber and the collection probability in the front region of the cell. The obtained results agree with current literature values obtained by other characterization techniques. Furthermore, the temperature dependence of the recombination lifetime is explained by Shockley-Read-Hall recombination through a single bulk defect level with an activation energy of 200 meV.

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Pascal:11-0406207

Le document en format XML

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 solar cells</title>
<author><name sortKey="Troviano, M" uniqKey="Troviano M">M. Troviano</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Electrotecnia, Universidad Nacional del Comahue-CONICET, Buenos Aires 1400</s1>
<s2>8300 Neuquén</s2>
<s3>ARG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Argentine</country>
<wicri:noRegion>8300 Neuquén</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Taretto, K" uniqKey="Taretto K">K. Taretto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Electrotecnia, Universidad Nacional del Comahue-CONICET, Buenos Aires 1400</s1>
<s2>8300 Neuquén</s2>
<s3>ARG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Argentine</country>
<wicri:noRegion>8300 Neuquén</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">11-0406207</idno>
<date when="2011">2011</date>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbent material</term>
<term>Activation energy</term>
<term>Charge carrier recombination</term>
<term>Conversion rate</term>
<term>Copper selenides</term>
<term>Defect level</term>
<term>Diffusion length</term>
<term>Durability</term>
<term>Gallium phosphide solar cells</term>
<term>Gallium selenides</term>
<term>High efficiency</term>
<term>Indium selenides</term>
<term>Modeling</term>
<term>Quantum yield</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>State of the art</term>
<term>Temperature dependence</term>
<term>Temperature effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term>
<term>Dépendance température</term>
<term>Rendement quantique</term>
<term>Cellule solaire</term>
<term>Rendement élevé</term>
<term>Taux conversion</term>
<term>Matériau absorbant</term>
<term>Longueur diffusion</term>
<term>Durabilité</term>
<term>Etat actuel</term>
<term>Cellule solaire gallium phosphure</term>
<term>Recombinaison porteur charge</term>
<term>Niveau défaut</term>
<term>Energie activation</term>
<term>Modélisation</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Cu(In,Ga)Se2</term>
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<front><div type="abstract" xml:lang="en">Despite the high solar cell efficiencies achieved with Cu(In,Ga)Se<sub>2</sub>
 (CIGS) absorbers, key parameters such as the carrier diffusion length and recombination lifetime are still under investigation. Here, we extract lifetime and diffusion length from temperature-dependent internal quantum efficiency (IQET) spectra of state of the art high efficiency CIGS solar cells. Two-parameter fits to the measured IQE curves using a model for double-graded gap solar cells show very good agreement in the studied temperature range T=146-293 K, allowing the extraction of the electron recombination lifetime in the absorber and the collection probability in the front region of the cell. The obtained results agree with current literature values obtained by other characterization techniques. Furthermore, the temperature dependence of the recombination lifetime is explained by Shockley-Read-Hall recombination through a single bulk defect level with an activation energy of 200 meV.</div>
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 solar cells</s1>
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<fA14 i1="01"><s1>Departamento de Electrotecnia, Universidad Nacional del Comahue-CONICET, Buenos Aires 1400</s1>
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<fC01 i1="01" l="ENG"><s0>Despite the high solar cell efficiencies achieved with Cu(In,Ga)Se<sub>2</sub>
 (CIGS) absorbers, key parameters such as the carrier diffusion length and recombination lifetime are still under investigation. Here, we extract lifetime and diffusion length from temperature-dependent internal quantum efficiency (IQET) spectra of state of the art high efficiency CIGS solar cells. Two-parameter fits to the measured IQE curves using a model for double-graded gap solar cells show very good agreement in the studied temperature range T=146-293 K, allowing the extraction of the electron recombination lifetime in the absorber and the collection probability in the front region of the cell. The obtained results agree with current literature values obtained by other characterization techniques. Furthermore, the temperature dependence of the recombination lifetime is explained by Shockley-Read-Hall recombination through a single bulk defect level with an activation energy of 200 meV.</s0>
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<s5>01</s5>
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<s5>04</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Longitud difusión</s0>
<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>Durability</s0>
<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Recombinación portador carga</s0>
<s5>12</s5>
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<s5>13</s5>
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<s2>NK</s2>
<s5>22</s5>
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<s2>NK</s2>
<s5>23</s5>
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<s5>25</s5>
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<s5>25</s5>
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<fC03 i1="20" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
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</fN21>
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Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells

Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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